The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Jan. 05, 2017
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/119 (2006.01); C04B 35/596 (2006.01); C04B 35/599 (2006.01); B23B 27/14 (2006.01); C04B 35/597 (2006.01); B23F 21/00 (2006.01); B23G 5/06 (2006.01); C04B 35/58 (2006.01); C04B 35/584 (2006.01); C04B 35/587 (2006.01); C04B 35/645 (2006.01); C04B 35/488 (2006.01);
U.S. Cl.
CPC ...
C04B 35/597 (2013.01); B23B 27/148 (2013.01); B23F 21/00 (2013.01); B23G 5/06 (2013.01); C04B 35/488 (2013.01); C04B 35/584 (2013.01); C04B 35/587 (2013.01); C04B 35/58014 (2013.01); C04B 35/645 (2013.01); B23B 2222/04 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3246 (2013.01); C04B 2235/3272 (2013.01); C04B 2235/386 (2013.01); C04B 2235/3839 (2013.01); C04B 2235/3843 (2013.01); C04B 2235/3847 (2013.01); C04B 2235/3852 (2013.01); C04B 2235/3865 (2013.01); C04B 2235/3869 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/3882 (2013.01); C04B 2235/3886 (2013.01); C04B 2235/405 (2013.01); C04B 2235/656 (2013.01); C04B 2235/785 (2013.01); C04B 2235/786 (2013.01); C04B 2235/80 (2013.01); C04B 2235/85 (2013.01);
Abstract
A sintered material includes a first material and a second material, the first material being partially stabilized ZrOhaving a crystal grain boundary or crystal grain in which 5 to 90 volume % of AlOis dispersed with respect to a whole of the first material, the second material including at least one of SiAlON, silicon nitride and titanium nitride, the sintered material including 1 to 50 volume % of the first material.