The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Jan. 04, 2018
Applicant:

Starfire Industries, Llc, Champaign, IL (US);

Inventors:

David N. Ruzic, Pesotum, IL (US);

Robert A. Stubbers, Champaign, IL (US);

Brian E. Jurczyk, Champaign, IL (US);

Assignee:

STARFIRE INDUSTRIES, LLC, Champaign, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H05H 1/46 (2006.01); H01L 31/18 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H05H 1/46 (2013.01); H01L 31/18 (2013.01); H01L 21/67017 (2013.01); H01L 21/67155 (2013.01); H05H 2001/463 (2013.01); H05H 2001/4615 (2013.01);
Abstract

Systems and methods are described herein for generating surface-wave plasmas capable of simultaneously achieving high density with low temperature and planar scalability. A key feature of the invention is reduced damage to objects in contact with the plasma due to the lack of an RF bias; allowing for damage free processing. The preferred embodiment is an all-in-one processing reactor suitable for photovoltaic cell manufacturing, performing saw-damage removal, oxide stripping, deposition, doping and formation of hetero structures. The invention is scalable for atomic-layer deposition, etching, and other surface interaction processes.


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