The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Jun. 26, 2017
Applicants:

Foundation of Soongsil University-industry Cooperation, Seoul, KR;

Industry-university Cooperation Foundation Hanyang University, Seoul, KR;

Inventors:

Do Hwan Kim, Anyang-si, KR;

Moon Sung Kang, Seoul, KR;

Haejung Hwang, Seoul, KR;

Han Wool Park, Seoul, KR;

Ji Hye Shin, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); C09D 5/24 (2006.01); C09D 165/00 (2006.01); C09D 7/63 (2018.01); H01L 51/00 (2006.01); C08K 5/5455 (2006.01); C08K 5/54 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0566 (2013.01); C09D 5/24 (2013.01); C09D 7/63 (2018.01); C09D 165/00 (2013.01); H01L 51/0007 (2013.01); H01L 51/0028 (2013.01); H01L 51/0035 (2013.01); H01L 51/0541 (2013.01); H01L 51/0545 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/3243 (2013.01); C08G 2261/334 (2013.01); C08G 2261/51 (2013.01); C08G 2261/92 (2013.01); C08K 5/5406 (2013.01); C08K 5/5455 (2013.01); H01L 51/0562 (2013.01);
Abstract

According to embodiments of the present invention, a method of manufacturing an organic semiconductor device includes forming a first organic semiconductor layer on a substrate, and forming a self-assembled monolayer by providing a self-assembly precursor onto the first organic semiconductor layer. The first organic semiconductor layer has a reactive group on a top surface of the first organic semiconductor layer. The forming of the self-assembled monolayer includes forming a chemical bond between the self-assembly precursor and the reactive group of the first organic semiconductor layer.


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