The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jun. 26, 2018
International Business Machines Corporation, Armonk, NY (US);
Ning Li, White Plains, NY (US);
Qinglong Li, Bristow, VA (US);
Kunal Mukherjee, Santa Barbara, CA (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.