The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Nov. 29, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, Gyeonggi-do, KR;
Jinseong Heo, Seoul, KR;
Kiyoung Lee, Seoul, KR;
Seongjun Park, Seoul, KR;
Yongseon Shin, Suwon-si, KR;
Woojong Yu, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Abstract
Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.