The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Aug. 07, 2018
Panasonic Corporation, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a substrate; a drift layer which is disposed on the substrate and has a groove; an underlayer which is disposed above the drift layer; a first opening which penetrates the underlayer to reach the drift layer; an electron transit layer and an electron supply layer which are disposed to cover the first opening; a second opening which penetrates the electron supply layer and the electron transit layer to reach the underlayer; a gate electrode which is disposed above the electron supply layer at a position corresponding to a position of the first opening; a source electrode which is disposed to cover the second opening and in contact with the underlayer; and a drain electrode which is disposed on a backside surface of the substrate. A bottom surface of the groove is closer to the substrate than a bottom surface of the first opening.