The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jun. 11, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Ze Chen, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor substrate includes a first-conductivity drift layer, a first-conductivity first impurity layer, a second-conductivity base layer, and a first-conductivity first emitter region. The first impurity layer is provided on the drift layer, and has impurity concentration higher than impurity concentration of the drift layer. The base layer is provided on the first impurity layer. The first emitter region is provided on the base layer. The first impurity layer connects between trenches. The plurality of trenches are formed in the semiconductor substrate covered by a gate insulation film. The gate insulation film has a first thickness between a gate electrode and the drift layer in a side wall surface, and has a second thickness between the gate electrode and the drift layer in a bottom surface. The second thickness is larger than the first thickness.