The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jul. 15, 2015
Applicant:
Bae Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Inventors:
Kanin Chu, Nashua, NH (US);
Pane Chane Chao, Nashua, NH (US);
Carlton T Creamer, Brookline, NH (US);
Assignee:
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/778 (2006.01); H01L 27/12 (2006.01); H01L 23/373 (2006.01); H01L 21/20 (2006.01); H01L 21/683 (2006.01); H01L 21/04 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 21/0254 (2013.01); H01L 21/2007 (2013.01); H01L 21/6835 (2013.01); H01L 21/76876 (2013.01); H01L 23/3732 (2013.01); H01L 27/1266 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 21/0475 (2013.01); H01L 21/2011 (2013.01); H01L 29/2003 (2013.01); H01L 2221/68327 (2013.01);
Abstract
A GaN on diamond wafer and method for manufacturing the same is provided. The method comprising: disposing a GaN device or wafer on a substrate, having a nucleation layer disposed between the substrate and a GaN layer; affixing the device to a handling wafer; removing the substrate and substantially all the nucleation layer; and bonding the GaN layer to a diamond substrate.