The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jun. 06, 2018
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Yang Beom Kang, Cheongju-si, KR;
Kang Sup Shin, Cheongju-si, KR;
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
A semiconductor device includes a semiconductor region, deep trenches, a dielectric film, a conductive material, an interlayer insulating film, and a metal interconnection. The semiconductor region has a first conductivity type in a silicon substrate. The deep trenches are disposed in the semiconductor region. The dielectric film is disposed on sidewalls of the deep trenches. The conductive material is disposed on the dielectric film. The interlayer insulating film is disposed on upper surface portions of the deep trenches to create a void inside each of the deep trenches. The metal interconnection is disposed on the interlayer insulating film.