The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jul. 06, 2017
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG Display Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3248 (2013.01); H01L 27/1222 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/78618 (2013.01); H01L 29/78624 (2013.01); H01L 29/78675 (2013.01); H01L 27/1225 (2013.01); H01L 27/3262 (2013.01); H01L 29/7869 (2013.01); H01L 2227/323 (2013.01);
Abstract
A thin-film transistor includes an active layer, a gate electrode, a source electrode and a drain electrode. The gate electrode overlaps the active layer. The source electrode and the drain electrode are connected to the active layer. The active layer includes a source region connected to the source electrode, a drain region connected to the drain electrode, a channel region overlapping with the gate electrode, a first resistive region between the source region and the channel region, and a second resistive region between the drain region and the channel region. The length of the first resistive region is larger than the length of the second resistive region.