The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Mar. 16, 2016
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventors:
Hiroaki Sei, Kanagawa, JP;
Kazuhiro Ohba, Tokyo, JP;
Assignee:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 27/2427 (2013.01); H01L 45/04 (2013.01); H01L 45/065 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/15 (2013.01); G11C 2213/51 (2013.01); G11C 2213/71 (2013.01); G11C 2213/76 (2013.01);
Abstract
A switch device according to an embodiment of the technology includes a first electrode, a second electrode that faces the first electrode, and a switch layer provided between the first electrode and the second electrode. The switch layer includes a chalcogen element. The switch device further includes a diffusion suppressing layer that is in contact with at least a portion of a surface of the switch layer, and suppresses diffusion of oxygen into the switch layer.