The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Sep. 18, 2018
Korea Institute of Science and Technology, Seoul, KR;
Gyung-Min Choi, Gyeonggi-do, KR;
Byoung-Chul Min, Seoul, KR;
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Abstract
The present invention relates to a magnetic RAM including a memory cell, the memory cell including a metal layer, a magnetic tunnel junction layer storing predefined information by causing a magnetization direction to be up or down, a spin-current transfer layer transferring spin current to the magnetic tunnel junction layer, a spin-current generation layer generating the spin current, and a thermal electron injection layer injecting thermal electrons into the spin-current generation layer, and the magnetization direction may be changed due to spin transfer torque generated in the magnetic tunnel junction layer, whereby it is possible to reduce current density consumed for switching the magnetization direction of the free magnetic sub-layer in the magnetic tunnel junction layer.