The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Apr. 17, 2018
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Hideomi Kumano, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/14625 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H04N 5/369 (2013.01);
Abstract

A solid-state image sensor includes semiconductor substrate having element forming pixel array and element forming peripheral circuit, and wiring structure. The wiring structure includes electrically conductive pattern arranged in trench of interlayer insulation film and includes primary lines parallel to first direction and auxiliary lines connecting the primary lines. Width of primary line in second direction perpendicular to the first direction is not less than 250 nm and not more than 2,000 nm, interval between adjacent primary lines is not more than 500 nm, width of the auxiliary line in the first direction is less than 400 nm. Value obtained by dividing area of the electrically conductive pattern in square region by area of the square region is not more than 0.9.


Find Patent Forward Citations

Loading…