The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Nov. 09, 2017
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;
Inventors:
Chunhsiung Fang, Guangdong, CN;
Poyen Lu, Guangdong, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 21/0274 (2013.01); H01L 21/02565 (2013.01); H01L 21/02614 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1259 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78609 (2013.01); H01L 29/78618 (2013.01); G02F 1/1368 (2013.01);
Abstract
A manufacturing method for a thin film transistor array substrate is provided. The method includes steps of depositing a first photoresist layer on a substrate before depositing the active metal layer; removing the first photoresist layer on a surface of the gate layer from the active metal by a removing process after exposing and developing the first photoresist layer, so that a surface of the gate layer is not covered by the active metal; chemically reacting the active metal with a portion of the active layer by a predetermined process.