The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jan. 15, 2018
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Aravind C Appaswamy, Plano, TX (US);
James P. Di Sarro, Allen, TX (US);
Farzan Farbiz, Santa Clara, CA (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 27/07 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0722 (2013.01); H01L 27/0705 (2013.01); H01L 27/0711 (2013.01); H01L 29/4916 (2013.01); H01L 29/7393 (2013.01);
Abstract
An integrated circuit is fabricated on a semiconductor substrate. An insulated gate bipolar transistor (IGBT) is formed upon the semiconductor substrate in which the IGBT has an anode terminal, a cathode terminal, and a gate terminal, and a drift region. A diode is also formed on the semiconductor substrate and has an anode terminal and a cathode terminal, in which the anode of the diode is coupled to the anode terminal of the IGBT and the cathode of the diode is coupled to the drift region of the IGBT.