The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Feb. 20, 2017
Stmicroelectronics (Tours) Sas, Tours, FR;
Aurelie Arnaud, Saint-Cyu sur Loire, FR;
STMicroelectronics (Tours) SAS, Tours, FR;
Abstract
An electrostatic discharge protection device includes the following successive structures: a very heavily-doped semiconductor substrate of a first conductivity type; a first heavily-doped buried semiconductor layer of a second conductivity type; a first lightly-doped semiconductor layer of the second conductivity type; and a second heavily-doped layer of the first conductivity type. The device further includes, located between first heavily-doped buried semiconductor layer and the first lightly-doped semiconductor layer, a third doped layer of the first conductivity type having a thickness and a dopant atom concentration configured to form, at a junction of the first lightly-doped semiconductor layer and the third layer, a diode having a reverse punchthrough operation.