The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Sep. 20, 2016
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Kei Yamamoto, Chiyoda-ku, JP;

Hodaka Rokubuichi, Chiyoda-ku, JP;

Dai Nakajima, Chiyoda-ku, JP;

Kiyofumi Kitai, Chiyoda-ku, JP;

Yoichi Goto, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3672 (2013.01); H01L 21/4882 (2013.01); H01L 21/56 (2013.01); H01L 23/3735 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/072 (2013.01); H01L 25/50 (2013.01); H01L 23/3121 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.


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