The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Jun. 20, 2018
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Yuya Akeboshi, Mie, JP;

Hiroshi Tomita, Mie, JP;

Hisashi Okuchi, Mie, JP;

Yasuhito Yoshimizu, Mie, JP;

Hiroaki Yamada, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/67 (2006.01); C23F 1/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C23F 1/40 (2013.01); H01L 21/6708 (2013.01); H01L 21/67075 (2013.01); H01L 21/67051 (2013.01);
Abstract

In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (HO) of a first content rate to etch the first metallic film. The second liquid includes water (HO) at a second content rate higher than the first content rate after the etching has started.


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