The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
May. 15, 2017
Applicant:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/32 (2006.01); H01L 29/78 (2006.01); H01L 21/3205 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32051 (2013.01); H01L 21/31116 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 21/76801 (2013.01); H01L 23/522 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, an insulating film, and an electrode. The semiconductor substrate includes a first surface. The insulating film is provided on the first surface of the semiconductor substrate and includes a second surface opposite to the first surface. The electrode is connected to the second surface of the insulating film and includes a side surface, a first face in contact with the insulating film, and a second face opposite to the first face. An outer periphery of the second face of the electrode is formed on an inner side of an outer periphery of the first face.