The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Mar. 01, 2018
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventor:
Mitsunari Horiuchi, Yokkaichi Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/3244 (2013.01); H01L 21/3065 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01L 21/76802 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma etching method includes performing a plasma etching using a gas containing CF. An emission intensity of CFis equal to or more than 3.5 times an emission intensity of Cwhile generating plasma.