The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Mar. 20, 2018
Hitachi Kokusai Electric Inc., Tokyo, JP;
Takahiro Miyakura, Toyama, JP;
Atsushi Moriya, Toyama, JP;
Naoharu Nakaiso, Toyama, JP;
Kensuke Haga, Toyama, JP;
Kokusai Electric Corporation, Tokyo, JP;
Abstract
There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.