The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Feb. 12, 2018
Applicant:
Facebook Technologies, Llc, Menlo Park, CA (US);
Inventors:
Christopher Percival, Blarney, IE;
James Small, Glasgow, GB;
Assignee:
Facebook Technologies, LLC, Menlo Park, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 37/30 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/263 (2006.01); G03F 7/20 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3007 (2013.01); G03F 7/2037 (2013.01); G03F 7/2047 (2013.01); G03F 7/70075 (2013.01); H01J 37/3175 (2013.01); H01L 21/2636 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); G03F 2007/2067 (2013.01); H01J 2237/152 (2013.01);
Abstract
A lithography system includes an electron source, a lens, and a stencil mask. The electron source emits a beam of electrons. The lens converts the emitted beam of electrons into a diffuse beam of parallel electrons. The stencil mask is positioned between the lens and a semiconductor wafer with an electron-sensitive resists. The stencil mask has a pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist of the wafer.