The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jan. 25, 2017
Applicant:
Hyunkook Park, Anyang-si, KR;
Inventor:
Hyunkook Park, Anyang-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 13/00 (2006.01); G11C 29/52 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G06F 3/061 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0679 (2013.01); G06F 11/1048 (2013.01); G06F 11/1072 (2013.01); G11C 13/0033 (2013.01); G11C 16/3427 (2013.01); G11C 29/52 (2013.01); G11C 16/0483 (2013.01);
Abstract
A data storage device according to example embodiments of inventive concepts includes a nonvolatile memory and a memory controller. In the nonvolatile memory, one read unit is configured to store a plurality of codewords. If a fail occurs in one or more codewords stored in the nonvolatile memory, the memory controller may search a read voltage of the nonvolatile memory using a correctable codeword. The data storage device according to example embodiments may predict an optimum read voltage level without performing a valley search operation.