The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jun. 16, 2016
Applicant:
Georgia Tech Research Corporation, Atlanta, GA (US);
Inventors:
William Alan Doolittle, Atlanta, GA (US);
Evan A. Clinton, Atlanta, GA (US);
Chloe A. M. Fabien, Atlanta, GA (US);
Brendan Patrick Gunning, Atlanta, GA (US);
Joseph J. Merola, Atlanta, GA (US);
Assignee:
Georgia Tech Research Corporation, Atlanta, GA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); H01L 21/02 (2006.01); C30B 29/40 (2006.01); C23C 14/06 (2006.01); C23C 14/22 (2006.01); C30B 31/06 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C23C 14/0641 (2013.01); C23C 14/221 (2013.01); C30B 29/406 (2013.01); C30B 31/06 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01);
Abstract
Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved.