The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Dec. 04, 2014
Applicant:
Technische Universitaet Berlin, Berlin, DE;
Inventors:
Michael Lublow, Berlin, DE;
Anna Fischer, Berlin, DE;
Matthias Driess, Berlin, DE;
Thomas Schedel-Niedrig, Kleinmachnow, DE;
Marcel-Philip Luecke, Vaihingen an der Enz, DE;
Assignee:
TECHNISCHE UNIVERSITAET BERLIN, Berlin, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 9/08 (2006.01); C25D 5/50 (2006.01); C25D 7/12 (2006.01); C25D 3/66 (2006.01); C25D 5/34 (2006.01); C25D 5/00 (2006.01); C01G 49/10 (2006.01); C01G 51/08 (2006.01); C01G 53/08 (2006.01); C01G 3/04 (2006.01); C25B 11/04 (2006.01); C25B 1/00 (2006.01); C01G 49/02 (2006.01); C01G 51/04 (2006.01); C01G 53/00 (2006.01); C01G 53/04 (2006.01); C01G 3/02 (2006.01); C01B 33/20 (2006.01); C01G 51/00 (2006.01);
U.S. Cl.
CPC ...
C25D 9/08 (2013.01); C01B 33/20 (2013.01); C01G 3/02 (2013.01); C01G 3/04 (2013.01); C01G 49/02 (2013.01); C01G 49/10 (2013.01); C01G 51/04 (2013.01); C01G 51/08 (2013.01); C01G 51/40 (2013.01); C01G 53/00 (2013.01); C01G 53/006 (2013.01); C01G 53/04 (2013.01); C01G 53/08 (2013.01); C25B 1/003 (2013.01); C25B 11/0452 (2013.01); C25D 3/66 (2013.01); C25D 5/003 (2013.01); C25D 5/34 (2013.01); C25D 5/50 (2013.01); C25D 7/12 (2013.01); C01P 2002/85 (2013.01); C01P 2004/03 (2013.01); C01P 2006/40 (2013.01);
Abstract
The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.