The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Jun. 14, 2018
Applicant:

Taiyo Yuden Co., Ltd., Tokyo, JP;

Inventors:

Shinji Taniguchi, Tokyo, JP;

Hiroomi Kaneko, Tokyo, JP;

Hiroshi Kawakami, Tokyo, JP;

Tokihiro Nishihara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/56 (2006.01); H03H 9/70 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02102 (2013.01); H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/02031 (2013.01); H03H 9/02118 (2013.01); H03H 9/131 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/178 (2013.01); H03H 9/562 (2013.01); H03H 9/564 (2013.01); H03H 9/568 (2013.01); H03H 9/706 (2013.01); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01);
Abstract

A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.


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