The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

May. 08, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Zhibo Tao, Palo Alto, CA (US);

Lei Chen, Milpitas, CA (US);

Kai-Fang Wei, Milipatas, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 1/32 (2007.01); H02M 1/08 (2006.01); H02M 7/217 (2006.01); H03K 5/24 (2006.01);
U.S. Cl.
CPC ...
H02M 1/32 (2013.01); H02M 1/08 (2013.01); H02M 7/217 (2013.01); H02M 3/33523 (2013.01); H03K 5/24 (2013.01);
Abstract

A synchronous rectifier (SR) controller includes a controller having an input adapted to be coupled to a drain of an SR transistor, and an output for providing a drive signal in response thereto, a gate driver having an input coupled to the output of the controller, and an output adapted to be coupled to a gate of the SR transistor for providing a gate signal thereto, a first transistor having a drain coupled to the gate terminal, a gate, and a source coupled to ground, and a protection circuit having an input coupled to the drain terminal, and an output coupled to the gate of the first transistor. The protection circuit is responsive to a voltage on the drain terminal exceeding a first voltage to provide a voltage on the gate of the first transistor greater than a turn-on voltage and less than an overvoltage of the first transistor.


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