The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Nov. 01, 2018
Applicant:

Emagin Corporation, Hopewell Junction, NY (US);

Inventors:

Ilyas I. Khayrullin, Hopewell Junction, NY (US);

Evan P. Donoghue, Hopewell Junction, NY (US);

Kerry Tice, Hopewell Junction, NY (US);

Tariq Ali, Hopewell Junction, NY (US);

Qi Wang, Hopewell Junction, NY (US);

Fridrich Vazan, Pittsford, NY (US);

Amalkumar P. Ghosh, Hopewell Junction, NY (US);

Assignee:

eMagin Corporation, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/56 (2006.01); H01L 51/00 (2006.01); H01L 23/544 (2006.01); C23C 14/24 (2006.01); C23C 14/04 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); C23C 14/042 (2013.01); C23C 14/24 (2013.01); H01L 22/20 (2013.01); H01L 23/544 (2013.01); H01L 51/0011 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A method of active alignment of a shadow mask to a substrate includes a first alignment by moving the shadow mask and the substrate a first distance in a vertical direction, capturing a first alignment image, determining at least one of a first correction distance and a first rotational correction angle, and aligning the shadow mask and the substrate by moving the first correction distance and rotating the first rotational correction angle. The method further includes performing a first material deposition process on the substrate and continuously capturing a first series of alignment images during the generation of the first material deposition flow. During the generation of the first material deposition flow the first series of alignment images are analyzed to determine a second correction distance and a second rotational correction angle and determining whether second distance and/or rotational correction angle is greater than or equal to a predetermined value to cause a second alignment process to occur.


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