The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Jan. 22, 2018
Applicant:

Maven Optronics Co., Ltd., Hsinchu County, TW;

Inventors:

Chieh Chen, Palo Alto, CA (US);

Tsung-Hsi Wang, Hsinchu, TW;

Assignee:

MAVEN OPTRONICS CO., LTD., Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/60 (2010.01); H01L 33/50 (2010.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01); H01L 33/00 (2010.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/0095 (2013.01); H01L 33/486 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01L 33/508 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2224/48091 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A chip-scale packaging (CSP) light-emitting device (LED), including a light-emitting semiconductor die, a photoluminescent layer, a chip-side-spacer structure, and a beveled chip reflective structure, is disclosed. The beveled reflective structure is disposed surrounding the chip-edge surfaces of the light-emitting semiconductor die, wherein the chip-side-spacer structure is disposed between the beveled reflective structure and the chip-edge surfaces of the light-emitting semiconductor die. A manufacturing method to fabricate the CSP LED is also disclosed. The CSP LED with a beveled chip reflector can effectively reflect the light radiated from the light-emitting semiconductor die toward the photoluminescent layer so that the light extraction efficiency is improved.


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