The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Mar. 09, 2018
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Assignee:
SEOUL VIOSYS CO., LTD., Ansan-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/22 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/0075 (2013.01); H01L 33/02 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/14 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract
Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.