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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10522713 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Oct. 01, 2018

Light-emitting diode

Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Guanying Huang, Xiamen, CN;

Chun-Yi Wu, Xiamen, CN;

Chaoyu Wu, Xiamen, CN;

Duxiang Wang, Xiamen, CN;

Assignee:

XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;

Attorneys:

Syncoda LLC

Feng Ma

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 25/075 (2006.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 25/0753 (2013.01); H01L 33/06 (2013.01); H01L 33/38 (2013.01); H01L 33/0062 (2013.01); H01L 33/30 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light-emitting diode includes an epitaxial-laminated layer, including an n-type ohmic contact layer; a first n-type transition layer; a second n-type transition layer; an n-type confinement layer; an active layer; a p-type confinement layer; a p-type window layer; a first electrode over an upper surface of the epitaxial-laminated layer; and a conductive substrate located over a bottom surface of the epitaxial-laminated layer.

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Huang, Guanying. (2019). Light-emitting diode (U.S. Patent No. 10522713). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10522713

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