The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Jan. 24, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Ravi Pramod Kumar Vedula, San Diego, CA (US);
Stephen Alan Fanelli, San Marcos, CA (US);
Farid Azzazy, Laguna Niguel, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78648 (2013.01); H01L 27/124 (2013.01); H01L 29/0649 (2013.01); H01L 29/401 (2013.01); H01L 29/42384 (2013.01); H01L 29/42392 (2013.01); H01L 29/66772 (2013.01); H01L 29/78618 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 29/78603 (2013.01);
Abstract
A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.