logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10522675 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Jan. 25, 2012

Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit

Applicant:

Christoph Kadow, Gauting, DE;

Inventor:

Christoph Kadow, Gauting, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Natalia A Gondarenko

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/7397 (2013.01); H01L 29/7803 (2013.01); H01L 29/0615 (2013.01); H01L 29/0653 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/42368 (2013.01);
Abstract

An integrated circuit includes a first and a second field effect transistor structure. The first field effect transistor structure includes a first gate electrode structure and a first field electrode structure. The second field effect transistor structure includes a second gate electrode structure and a second field electrode structure. The first and the second gate electrode structures are electrically separated from each other. The first and the second field electrode structures are separated from each other.

Find Patent Forward Citations

Quick Actions:

Kadow, Christoph. (2019). Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit (U.S. Patent No. 10522675). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10522675

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…