The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Oct. 03, 2018
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Matthew Charles, Grenoble, FR;
Abstract
The invention relates to a process for manufacturing a heterojunction electronic component provided with an embedded barrier layer, the process comprising: depositing by epitaxy, in a vapour phase epitaxial growth chamber with an atmosphere exhibiting a first nonzero ammonia concentration, of a GaN precursor layer of the embedded barrier layer, comprising a first layer doped with a Mg or Fe dopant; placing, while maintaining the substrate in the chamber, the atmosphere at a second ammonia concentration at most equal to a third of the first concentration, in order to remove an upper part of the precursor layer; and then after the removal of the said upper part, while maintaining the substrate in the chamber, depositing by epitaxy of a layer of semiconductor material of the heterojunction electronic component to be manufactured, the said precursor layer then forming the embedded barrier layer under the said layer of semiconductor material.