The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Nov. 06, 2013
Yimin Guo, San Jose, CA (US);
Yimin Guo, San Jose, CA (US);
Shanghai Ciyu Information Technologies Co., Ltd., Shanghai, CN;
Abstract
A magnetoresistive element comprises a novel Boron-absorbing cap multilayer provided on the top surface of an amorphous CoFeB (or CoB, FeB) ferromagnetic recording layer. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface of the tunnel barrier layer as Boron elements migrate into the novel cap layer. Removing the top portion of the cap layer by means of sputtering etch or RIE etch processes followed by optional oxidization process, a thin thermally stable portion of cap layer is remained on top of the recording layer with low damping constant. Accordingly, a reduced write current is achieved for spin-transfer torque MRAM application.