The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Oct. 02, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kwang Soo Kim, Hwaseong-si, KR;
Shin Hwan Kang, Seoul, KR;
Jae Hoon Jang, Seongnam-si, KR;
Kohji Kanamori, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A memory device includes a plurality of gate electrode layers stacked on a substrate, a plurality of channel layers penetrating the plurality of gate electrode layers, a gate insulating layer between the plurality of gate electrode layers and the plurality of channel layers, and a common source line on the substrate adjacent to the gate electrode layers. The common source line includes a first part and a second part that are alternately arranged in a first direction and have different heights in a direction vertical to a top surface of the substrate. The gate insulating layer includes a plurality of vertical parts and a horizontal part. The plurality of vertical parts surrounds corresponding ones of the plurality of channel layers. The horizontal part extends parallel to a top surface of the substrate.