The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Nov. 13, 2018
Renesas Electronics Corporation, Tokyo, JP;
Tamotsu Ogata, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A semiconductor device having a nonvolatile memory cell arranged in a p-type well (active region) PW1 in a memory cell region 1A in a semiconductor substrate 1 and an MISFET arranged in a p-type well PW2 (active region) or an n-type well (active region) in a peripheral circuit region 2A is constructed as follows. The surface of an element isolation region STI1 surrounding the p-type well PW1 is set lower than the surface of an element isolation region STI2 surrounding the p-type well PW2 or the n-type well (H1<H2). By making the surface of the element isolation region STI1 receded and lowered, the effective channel width of both a control transistor and a memory transistor can be increased. Since the surface of the element isolation region STI2 is not made receded, an undesired film can be prevented from being residual over a dummy gate electrode.