The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Jan. 18, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Jae-yup Chung, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0207 (2013.01); H01L 27/1104 (2013.01); H01L 29/41791 (2013.01);
Abstract

An integrated circuit device includes a substrate, first and second fin-type active areas which extend in a first direction on the substrate, first and second gate lines on the substrate that extend in a second direction that crosses the first direction, and first and second contact structures. The first and second gate lines intersect the first and second fin-type active areas, respectively. The first contact structure is on the first fin-type active area at a side of the first gate line and contacts the first gate line. The second contact structure is on the second fin-type active area at a side of the second gate line. The first contact structure includes a first lower contact including metal silicide and a first upper contact on the first lower contact. The second contact structure includes a second lower contact including metal silicide and a second upper contact on the second lower contact.


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