The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

May. 25, 2015
Applicant:

Nissan Motor Co., Ltd., Yokohama-shi, Kanagawa-ken, JP;

Inventor:

Satoshi Tanimoto, Kanagawa, JP;

Assignee:

NISSAN MOTOR CO., LTD., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/373 (2006.01); H01L 23/64 (2006.01); H05K 1/02 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 23/3735 (2013.01); H01L 24/49 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H01L 23/645 (2013.01); H01L 24/06 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/30107 (2013.01); H05K 1/0209 (2013.01); H05K 2201/066 (2013.01);
Abstract

A module () includes an insulating substrate (), a power semiconductor device (HT), a power semiconductor device (LT), a bridge terminal (B), a high-side terminal (H), and a low-side terminal (L). The bridge terminal extends from a surface wiring conductor (B) at a position between the power semiconductor devices (HT,LT). The high-side terminal extends from a high-side rear surface wiring conductor (H) at a position between the power semiconductor devices (HT,LT). The low-side terminal extends from a low-side rear surface wiring conductor (L) at a position between the power semiconductor devices (HT,LT). A surface electrode of the power semiconductor device (HT) and a rear electrode of the power semiconductor device (LT) are connected to the surface wiring conductor (B).


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