The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Dec. 31, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yumie Kitajima, Tokyo, JP;

Tatunori Yanagimoto, Tokyo, JP;

Kiyoshi Arai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/24 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/4825 (2013.01); H01L 21/4839 (2013.01); H01L 23/49517 (2013.01); H01L 23/49558 (2013.01); H01L 23/49811 (2013.01); H01L 25/072 (2013.01); H01L 23/24 (2013.01); H01L 23/3735 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 25/18 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45424 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8384 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.


Find Patent Forward Citations

Loading…