The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Jan. 16, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Franco Mariani, Pentling-Neudorf, DE;
Adolf Koller, Regensburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 21/78 (2006.01); H01L 29/04 (2006.01); H01L 23/00 (2006.01); H01L 23/58 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/268 (2013.01); H01L 21/78 (2013.01); H01L 23/585 (2013.01); H01L 29/04 (2013.01); H01L 21/304 (2013.01); H01L 21/7806 (2013.01);
Abstract
A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate.