The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Feb. 28, 2018
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventor:
Takashi Ohashi, Yokkaichi Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01J 37/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01J 37/24 (2013.01); H01J 37/3244 (2013.01); H01J 37/3255 (2013.01); H01J 37/32091 (2013.01); H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01J 37/32816 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma processing device includes a stage, a cluster generation machine, and a plasma generation machine. The stage is disposed in a processing chamber. The stage may support a substrate. The cluster generation machine generates cluster gas by clustering process gas. The plasma generation machine generates plasma of at least one of the process gas and the cluster gas in the processing chamber. The plasma generation machine processes the substrate using the generated plasma.