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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10522363 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Jul. 24, 2018

Systems and methods for perforation and ohmic contact formation for gan epitaxial lift-off using an etch stop layer

Applicant:

Microlink Devices, Inc., Niles, IL (US);

Inventors:

Christopher Youtsey, Libertyville, IL (US);

Robert McCarthy, Chicago, IL (US);

Rekha Reddy, Chicago, IL (US);

Assignee:

MICROLINK DEVICES, INC., Niles, IL (US);

Attorneys:

McCarter & English, LLP

David R. Burns

Primary Examiner:

Mamadou L Diallo

Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/78 (2006.01); H01L 21/3063 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 31/0236 (2006.01); H01L 21/67 (2006.01); H01L 29/20 (2006.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 21/30612 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02664 (2013.01); H01L 21/30635 (2013.01); H01L 21/67075 (2013.01); H01L 21/67086 (2013.01); H01L 21/78 (2013.01); H01L 21/7813 (2013.01); H01L 29/2003 (2013.01); H01L 31/02363 (2013.01); H01L 33/0075 (2013.01); H01L 33/22 (2013.01);
Abstract

Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.

Find Patent Forward Citations

Youtsey, Christopher. (2019). Systems and methods for perforation and ohmic contact formation for gan epitaxial lift-off using an etch stop layer (U.S. Patent No. 10522363). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10522363

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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