The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Dec. 10, 2015
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventors:
Katsuhiko Fukasaku, Kanagawa, JP;
Takaaki Tatsumi, Kanagawa, JP;
Assignee:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28 (2013.01); H01L 21/28105 (2013.01); H01L 21/8234 (2013.01); H01L 27/0266 (2013.01); H01L 27/06 (2013.01); H01L 27/088 (2013.01); H01L 29/423 (2013.01); H01L 29/49 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 29/4983 (2013.01); H01L 29/6659 (2013.01); H01L 29/66545 (2013.01); H01L 29/66659 (2013.01); H01L 29/78 (2013.01); H01L 29/7833 (2013.01);
Abstract
Both an improvement of on-current and suppression of leakage current of a transistor are achieved. A transistor includes a drain, a source, a gate, and a gate insulating film. In the transistor, the gate insulating film is disposed between the source and the drain. In addition, in the transistor, the gate has a plurality of regions provided on a surface of the gate insulating film. In addition, in the gate, the plurality of regions provided on the gate insulating film have different work functions.