The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Mar. 28, 2018
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Yuji Umeda, Tokyo, JP;

Kumiko Yamazaki, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/64 (2006.01); H01G 4/12 (2006.01); C04B 35/495 (2006.01); C04B 35/626 (2006.01); C04B 35/634 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1254 (2013.01); C04B 35/495 (2013.01); C04B 35/6262 (2013.01); C04B 35/6264 (2013.01); C04B 35/62655 (2013.01); C04B 35/63416 (2013.01); C04B 35/64 (2013.01); C04B 2235/3895 (2013.01); C04B 2235/602 (2013.01); C04B 2235/606 (2013.01); C04B 2235/6567 (2013.01);
Abstract

A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)M(2))(M(3)M(4))(ON). 0≤x≤1, 0≤y≤1, and 0<z<⅓ are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of the oxynitride includes an octahedron structure including a center atom, two 4site atoms, and four 8site atoms. The center atom is M(3) or M(4). The 4site atom is O atom or N atom. The 8site atom is O atom or N atom. An angle θ formed between a straight line connecting two 4site atoms and a c-axis direction of the crystal structure in the octahedron structure satisfies 0.5°≤θ≤12°.


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