The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Apr. 19, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Dae Yeal Lee, Osan-si, KR;

Jaewoo Im, Yongin-si, KR;

Jae-Hak Yun, Hwaseong-si, KR;

Kangguk Lee, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 5/14 (2006.01); G11C 7/04 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 5/147 (2013.01); G11C 7/04 (2013.01); G11C 11/5628 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/3418 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01);
Abstract

A method of operating a nonvolatile memory device is provided. The nonvolatile memory device includes a memory cell array including a plurality of memory cells. The method includes: the nonvolatile memory device determining an operation mode based on the received command, the nonvolatile memory device generating a comparison voltage based on the determined operation mode, the nonvolatile memory device comparing the comparison voltage with a reference voltage to generate a result, and the nonvolatile memory device performing a recovery operation on at least one of the memory cells depending on the result.


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