The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Mar. 16, 2013
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Yoo Nam Jeon, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 11/5635 (2013.01); G11C 16/0483 (2013.01); G11C 2216/14 (2013.01);
Abstract
A method of operating a semiconductor memory device may include increasing threshold voltage of memory cells by performing an LSB program operation on the memory cells having first state, decreasing threshold voltage of memory cells to be programmed to second state of the memory cells to a level lower than a first level in unit of a memory cell for an MSB program operation, and increasing threshold voltage of memory cells to be programmed to third state of the memory cells to a level higher than a second level, which is higher than the first level, in unit of a memory cell for an MSB program operation.