The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Jun. 22, 2018
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Hyung Sik Won, Chungcheongbuk-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/08 (2006.01); G11C 7/12 (2006.01); H03F 1/02 (2006.01); H03F 3/45 (2006.01); H03F 1/30 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/08 (2013.01); G11C 5/146 (2013.01); G11C 5/147 (2013.01); G11C 7/062 (2013.01); G11C 7/12 (2013.01); H03F 1/0211 (2013.01); H03F 1/30 (2013.01); H03F 3/45076 (2013.01);
Abstract
A semiconductor memory device includes a sense amplifier, a voltage supply circuit and a voltage supply control circuit. The sense amplifier may be activated by receiving driving voltages from first to third voltage supply lines to detect and amplify voltage levels of a data line and a data bar line. The voltage supply circuit may apply the driving voltages to the first to third voltage supply lines in response to first to third voltage supply signals and a bias control signal. The voltage supply control circuit may generate the first to third voltage supply signals and the bias control signal in response to an active signal.