The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Apr. 30, 2018
Industrial Technology Research Institute, Hsinchu, TW;
National Tsing Hua University, Hsinchu, TW;
Ding-Zheng Lin, Taipei, TW;
Ta-Jen Yen, Zhubei, TW;
Bi-Shen Lee, New Taipei, TW;
Chih-Hao Huang, Kaohsiung, TW;
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
A Raman detecting chip for thin layer chromatography and a method for separating and detecting an analyte are provided. The Raman detecting chip for thin layer chromatography includes a silicon substrate. The silicon substrate includes a first portion, a second portion and a plurality of silicon nanowires disposed on the first portion, wherein each silicon nanowire has a top surface and a sidewall. A metal layer covers the top surface and at least a part of the sidewall of the silicon nanowire, wherein the silicon nanowire has a length L from 5 μm to 15 μm. The ratio between the length L1 of the side wall covered by the metal layer and the length L of the silicon nanowire is from 0.2 to 0.8.