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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10519566 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Dec. 27, 2018

Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof

Applicant:

Showa Denko K.k., Minato-ku, Tokyo, JP;

Inventors:

Daisuke Muto, Chichibu, JP;

Jun Norimatsu, Yokohama, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/20 (2006.01); C30B 25/12 (2006.01); C30B 29/36 (2006.01); C23C 16/32 (2006.01); C23C 16/458 (2006.01); H01L 29/16 (2006.01); C30B 25/16 (2006.01); C23C 16/455 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
C30B 25/20 (2013.01); C23C 16/325 (2013.01); C23C 16/4581 (2013.01); C23C 16/4584 (2013.01); C23C 16/4585 (2013.01); C23C 16/45504 (2013.01); C30B 25/12 (2013.01); C30B 25/165 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/68721 (2013.01); H01L 21/68735 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 29/1608 (2013.01); H01L 21/02634 (2013.01);
Abstract

Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.

Find Patent Forward Citations

Muto, Daisuke. (2019). Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof (U.S. Patent No. 10519566). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10519566

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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